Method for forming heterogeneous single garnet based crystals for passive Q-switched lasers and microlasers
US9506166B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | May 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/1643
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed are heterogeneous crystals for use in a laser cavity and methods of forming the crystals. A crystal can be a monolithic crystal containing a garnet-based activator region and a garnet-based Q-switch. Disclosed methods include hydrothermal growth techniques for the growth of differing epitaxial layers on a host. A YAG host material can be doped in one region with a suitable activator ion for lasing and can be formed with another region that is doped with a saturable absorber to form the Q-switch. Regions can be formed with controlled thickness in conjunction. Following formation, a heterogeneous crystal can be cut, polished and coated with mirror films at each end for use in a laser cavity to provide short pulses of high power emissions using high frequency pulse modes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.