Field-effect transistor, single-electron transistor and sensor using the same
US9506892B2 · kind B2 · utility
1Cited by
10References
22Claims
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Key dates
| Filing date | Jun 12, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jun 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/514
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A sensor capable of detecting detection targets that are necessary to be detected with high sensitivity is provided.It comprises a field-effect transistor 1A having a substrate 2, a source electrode 4 and a drain electrode 5 provided on said substrate 2, and a channel 6 forming a current path between said source electrode 4 and said drain electrode 5;
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.