Tunnel magnetoresistive sensor having conductive ceramic layers
US9508367B1 · kind B1 · utility
7Cited by
2References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 3, 2016 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Feb 3, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3948
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
In one general embodiment, an apparatus includes a sensor having an active tunnel magnetoresistive region, magnetic shields flanking the tunnel magnetoresistive region, and spacers between the active tunnel magnetoresistive region and the magnetic shields. The active tunnel magnetoresistive region includes a free layer, a tunnel barrier layer and a reference layer. At least one of the spacers includes an electrically conductive ceramic layer. The presence of the electrically conductive ceramic layer enables current-perpendicular-to-plane operation, while enhancing wear resistance and resistance to deformities of the thin films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.