Nonvolatile semiconductor memory device of variable resistive type with reduced variations of forming current after breakdown
US9508431B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2013 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Aug 2, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A device including a memory cell including a variable resistive memory element; a capacitor; a voltage generation circuit; and a switch circuit including a first switch and a second switch. The first switch is coupled between the voltage generation circuit and the capacitor without an intervention of the second switch. The second switch is coupled between the capacitor and the memory cell without an intervention of the first switch. The first switch is configured to take an on-state during a first period of time and an off-state during a second period of time following the first period of time and the second switch is configured to take an off-state during the first period of time and an on-state during the second period of time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.