Integrated vacuum microelectronic device and fabrication method thereof
US9508520B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 29, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jun 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J21/105
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated vacuum microelectronic device comprises: a highly doped semiconductor substrate, at least one insulating layer) placed above said doped semiconductor substrate, a vacuum aperture formed within said at least one insulating layer and extending to the highly doped semiconductor substrate, a first metal layer acting as a cathode, a second metal layer placed under said highly doped semiconductor substrate and acting as an anode. The first metal layer is placed adjacent to the upper edge of the vacuum aperture and the vacuum aperture has a width dimension such as the first metal layer remains suspended over the vacuum aperture.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.