Thermionic converter and manufacturing method of electrode of thermionic converter
US9508533B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Nov 27, 2013 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | May 6, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N10/17
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In a method of manufacturing an electrode of a thermionic converter, a carbide layer is formed on a base material by a vapor synthesis, an N-type diamond layer doped with a donor impurity is formed on the carbide layer by a vapor synthesis, and a surface of the N-type diamond layer is terminated with hydrogen. The base material is made of a metal, and the carbide layer is made of a metal carbide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.