Wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth, its apparatus and edge-bead removal method by using the same
US9508558B2 · kind B2 · utility
5Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 7, 2015 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Feb 27, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/20
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth. The wafer treatment solution includes a solution and a fluorine-containing additive mixed in the solution. The fluorine-containing additive has a following formula (I): Rf—X—(CH2CH2O)m—R1 (I); or a following formula (II):An apparatus and a method by using the wafer treatment solution are also provided herein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.