Patent · US Active

Semiconductor devices

US9508649B2 · kind B2 · utility

5Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJan 8, 2016
Grant dateNov 29, 2016
Priority date
Expiry dateJan 8, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B12/315
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor devices are provided. The semiconductor devices may include a first interconnection structure and a second interconnection structure which are disposed on a semiconductor substrate. A contact structure may be disposed between the first and second interconnection structures. A first lower air spacer may be disposed between the first interconnection structure and the contact structure. A second lower air spacer may be disposed between the second interconnection structure and the contact structure to be spaced apart from the first lower air spacer. An upper air spacer may be disposed on side surfaces of the contact structure to be connected to the first and second interconnection structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.