Semiconductor devices including a gate electrode and methods of manufacturing the same
US9508732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2015 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jun 22, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
In a semiconductor device, a first gate structure is provided in a cell transistor region and includes a floating gate electrode, a first dielectric layer pattern, and a control gate electrode including a first metal silicide pattern. A second gate structure is provided in a selecting transistor region and includes a first conductive layer pattern, a second dielectric layer pattern, and a first gate electrode including a second metal silicide pattern. A third gate structure is provided in a peripheral circuit region and includes a second conductive layer pattern, a third dielectric layer pattern including opening portions on the second conductive layer pattern, and a second gate electrode including a concavo-convex portion at an upper surface portion thereof and a third metal silicide pattern. The third metal silicide pattern has a uniform thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.