Gating device cell for cross array of bipolar resistive memory cells
US9508776B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 24, 2013 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Sep 24, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A gating device cell for a cross array of bipolar resistive memory cells comprises an n-p diode and a p-n diode, wherein the n-p diode and the p-n diode have opposite polarities and are connected in parallel, such that the gating device cell exhibits a bidirectional rectification feature. The gating device cell exhibits the bidirectional rectification feature, that is, it can provide a relatively high current density at any voltage polarity in its ON state, and also a relatively great rectification ratio (Rv/2/RV) under a read voltage. Therefore, it is possible to suppress read crosstalk in the cross array of bipolar resistive memory cells to avoid misreading, thereby solving the problem that a conventional rectifier diode is only applicable to a cross array of unipolar resistive memory cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.