Method of fabricating a semiconductor device
US9508832B2 · kind B2 · utility
0Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2015 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jun 24, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device includes forming a channel layer on a substrate, forming a sacrificial layer on the channel layer, forming a hardmask pattern on the sacrificial layer, and performing a patterning process using the hardmask pattern as an etch mask to form a channel portion with an exposed top surface. The channel and sacrificial layers may be formed of silicon germanium, and the sacrificial layer may have a germanium content higher than that of the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.