Thin-film transistor element, method for manufacturing same, and display device
US9508866B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jun 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
A thin-film transistor includes: a gate electrode; a channel layer not adjacent to the gate electrode; a channel protection layer exposing portion of the channel layer; a source electrode contacting the channel layer at portion of an exposed portion of the channel layer; and a drain electrode contacting the channel layer at portion of the exposed portion, in respective order. The channel layer includes oxide semiconductor. Surface of the channel protection layer includes upper surface and side surface extending from the upper surface to the exposed portion. The drain electrode has: a rising portion extending from above the exposed region to the channel layer along the side surface; and an upper surface covering portion continuous with the rising portion and extending onto portion of the upper surface. The upper surface covering portion has a facing portion facing a channel region and being 2.5 μm or less in channel length direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.