Schottky diode and method of fabricating the same
US9508873B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Jul 24, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Sep 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
Provided is a Schottky diode. The Schottky diode includes: a substrate; a core on the substrate; a metallic layer on the core; and a shell surrounding the core between the metallic layer and the substrate and adjusting a Fermi energy level of the core to form a Schottky junction between the core and the metallic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.