Solar cell metallisation and interconnection method
US9508884B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2014 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jan 30, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A solar cell and a method of forming a contact structure on a solar cell having a p-n junction formed between a first semiconductor region of a first dopant polarity and a second semiconductor region of a second dopant polarity opposite to the first dopant polarity. The method comprises: forming a plurality of contact points on a surface of the solar cell, whereby the contact points provide an electrical connection to the first semiconductor region; and locating a plurality of conducting wires over the solar cell to make electrical connection to the contact points. The contact points are either an exposed silicon surface or a silicon surface over which metal pads are formed. The metal pads may comprise a plated layer of a low-melting temperature metal and/or may have a thickness of less than 5 microns.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.