Method of selectively transferring semiconductor device
US9508894B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2013 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Jul 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/857
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of selectively transferring semiconductor devices comprises the steps of providing a substrate having a first surface and a second surface; providing a plurality of semiconductor epitaxial stacks on the first surface, wherein each of the plurality of semiconductor epitaxial stacks comprises a first semiconductor epitaxial stack and a second semiconductor epitaxial stack, and the first semiconductor epitaxial stack is apart from the second semiconductor epitaxial stack, and wherein a adhesion between the first semiconductor epitaxial stack and the substrate is different from a adhesion between the second semiconductor epitaxial stack and the substrate; and selectively separating the first semiconductor epitaxial stack or the second semiconductor epitaxial stack from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.