Magnetic memory device
US9508925B2 · kind B2 · utility
11Cited by
7References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 2015 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | Aug 3, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/18
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Provided is a magnetic memory device. The magnetic memory device includes a first magnetization layer, a tunnel barrier disposed on the first magnetization layer, a second magnetization layer disposed on the tunnel barrier, and a spin current assisting layer disposed on at least a portion of a sidewall of the second magnetization layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.