Nanochannel array of nanowires for resistive memory devices
US9508928B2 · kind B2 · utility
4Cited by
2References
19Claims
0Family size
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Key dates
| Filing date | May 15, 2013 |
| Grant date | Nov 29, 2016 |
| Priority date | — |
| Expiry date | May 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8845
Abstract
A resistive memory structure includes two electrodes sandwiching an insulating region. The structure further includes a nanochannel array providing a conducting path between the two electrodes. The nanochannel array includes a plurality of nanowires that extends from one electrode to the other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.