Thermal inkjet printhead stack with amorphous thin metal protective layer

US9511585B2 · kind B2 · utility

Assignee

• HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

• James Elmer Abbott, Jr. · Corvallis, US
• Arun Agarwal · Dallas, US
• Roberto A. Pugliese · Corvallis, US
• Greg Scott Long · Moraga, US
• Stephen Horvath · Hornsby, AU
• Douglas A. Keszler · Corvallis, US
• John Wager · Corvallis, US
• Kristopher Olsen · Corvallis, US
• John M McGlone · Corvallis, US

Key dates

• Filing date: Jul 12, 2013
• Grant date: Dec 6, 2016
• Expiry date: Jul 12, 2033

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B41J2202/11
• WIPO field: Textile and paper machines
• WIPO sector: Mechanical engineering

Abstract

The present disclosure is drawn to a thermal inkjet printhead stack with an amorphous thin metal protective layer, comprising an insulated substrate, a resistor applied to the insulated substrate, a resistor passivation layer applied to the resistor, and an amorphous thin metal protective layer applied to the resistor passivation layer. The amorphous thin metal protective layer can comprise from 5 atomic % to 90 atomic % of a metalloid of carbon, silicon, or boron. The film can also include a first and second metal, each comprising from 5 atomic % to 90 atomic % of titanium, vanadium, chromium, cobalt, nickel, zirconium, niobium, molybdenum, rhodium, palladium, hafnium, tantalum, tungsten, iridium, or platinum. The second metal is different than the first metal, and the metalloid, the first metal, and the second metal account for at least 70 atomic % of the amorphous thin metal protective layer.