MEMS device having a getter

US9511998B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Ashwin Samarao · Sunnyvale, US
• Gary O'Brien · Palo Alto, US
• Ando Feyh · Palo Alto, US
• Gary Yama · Mountain View, US
• Andrew Graham · Redwood City, US
• Bongsang Kim · Mountain View, US
• Fabian Purkl · Gerlingen, DE

Key dates

• Filing date: Mar 13, 2014
• Grant date: Dec 6, 2016
• Expiry date: Jun 10, 2034

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2203/035
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.