Patent · US Active

Integrated MEMs inertial sensing device with automatic gain control

US9513122B2 · kind B2 · utility

2Cited by

4References

19Claims

0Family size

Assignee

mCube, Inc. · US

Inventors

Ali J. Rastegar · San Jose, US
Sanjay Bhandari · San Jose, US

Key dates

Filing date	Jan 17, 2014
Grant date	Dec 6, 2016
Priority date	—
Expiry date	Jan 23, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG01C19/5783
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An integrated MEMS inertial sensing device can include a MEMS inertial sensor with a drive loop configuration overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS inertial sensor. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. This incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.