Patent · US Active

Volatile memory self-defresh

US9514802B2 · kind B2 · utility

1Cited by

3References

20Claims

0Family size

Assignee

SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

Zvi Guz · Palo Alto, US
Liang Yin · San Jose, US

Key dates

Filing date	Mar 25, 2015
Grant date	Dec 6, 2016
Priority date	—
Expiry date	Mar 25, 2035

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/4094
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

Embodiments of the inventive concept include a volatile memory device including a memory cell array, the memory cell array including multiple rows and/or banks to store data. The memory device can include an address decoder coupled to the memory cell array. The memory device can include a control logic section coupled to the address decoder. The control logic section can include a defresh logic section configured to intentionally violate, by an activate command, a row precharge time (TRP) and/or a row active time (TRAS) for each of the plurality of rows to clean the data from the memory cell array. Memory data can be cleaned from the memory cell array responsive to the violations.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.