Nonvolatile memory, nonvolatile programmable logic switch including nonvolatile memory, and nonvolatile programmable logic circuit
US9514839B2 · kind B2 · utility
2Cited by
9References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2015 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jun 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B20/25
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory according to an embodiment includes a memory cell, the memory cell including: a memory transistor including a source, a drain, a gate electrode disposed above a channel between the source and the drain, and a gate insulating film disposed between the channel and the gate electrode; and a fuse element disposed between the gate electrode and a wiring line to which the gate electrode of the memory transistor is connected.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.