Zinc oxide precursor and method of depositing zinc oxide-based thin film using the same
US9514857B2 · kind B2 · utility
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13Claims
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Key dates
| Filing date | Oct 9, 2013 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jan 2, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A zinc oxide (ZnO) precursor and a method of depositing a ZnO-based thin film using the same, with which a high-quality and high-purity ZnO-based thin film can be deposited. The ZnO precursor includes a mixture solvent containing at least two organic solvents which are mixed and a source material comprising diethyl zinc or dimethyl zinc which is diluted in the mixture solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.