Selective repairing process for barrier layer
US9514928B2 · kind B2 · utility
3Cited by
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19Claims
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Key dates
| Filing date | Jan 15, 2014 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Sep 5, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24331
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A selectively repairing process for a barrier layer is provided. A repair layer is formed by chemical vapor deposition using an organosilicon compound as a precursor gas. The precursor gas adsorbed on a low-k dielectric layer exposed by defects in a barrier layer is transformed to a porous silicon oxide layer has a density more than the density of the low-k dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.