Method for chemically passivating a surface of a product made of a III-V semiconductor material and the product obtained by such a method
US9514961B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Jun 12, 2012 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jun 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/102
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for chemically passivating a surface of a product made of a III-V semiconductor material in which a) a P(N) polymer film is formed by deposition in a solvent comprising liquid ammonia. The film is formed by deposition, without electrochemical assistance, in the solvent, in the presence of an oxidizing chemical additive comprising phosphorous and generating electrical charge carriers in said surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.