Cobalt based interconnects and methods of fabrication thereof
US9514983B2 · kind B2 · utility
26Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2012 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jun 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A metal interconnect comprising cobalt and method of forming a metal interconnect comprising cobalt are described. In an embodiment, a metal interconnect comprising cobalt includes a dielectric layer disposed on a substrate, an opening formed in the dielectric layer such that the substrate is exposed. The embodiment further includes a seed layer disposed over the substrate and a fill material comprising cobalt formed within the opening and on a surface of the seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.