Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

US9515211B2 · kind B2 · utility

Assignee

• UNIVERSITY OF SOUTH CAROLINA · US

Inventors

• Krishna C. Mandal · Ashland, US
• J. Russell Terry · Los Alamos, US

Key dates

• Filing date: Jul 28, 2014
• Grant date: Dec 6, 2016
• Expiry date: Jul 28, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/052

Abstract

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm−3 to about 5×1018 cm−3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm−3 to about 5×1015 cm−3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.