Light-emitting device and light-emitting apparatus
US9515239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 10, 2015 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Feb 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/80
Abstract
A light-emitting device includes a photoluminescent layer that emits light containing first light, and a light-transmissive layer located on or near the photoluminescent layer. A submicron structure is defined on at least one of the photoluminescent layer and the light-transmissive layer. The submicron structure includes at least projections or recesses. The submicron structure has spatial frequency components distributed at least from more than 0 to 2/Dint(min) as determined by two-dimensional Fourier transform of a pattern of the projections or recesses and satisfies the following relationship:0.8Dint(min)<λa/nwav-a where Dint(min) is the minimum center-to-center distance between adjacent projections or recesses, λa is the wavelength of the first light in air, and nwav-a is the refractive index of the photoluminescent layer for the first light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.