Photosensor having enhanced sensitivity
US9516248B2 · kind B2 · utility
14Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Dec 6, 2016 |
| Priority date | — |
| Expiry date | Jun 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method of controlling a photosensor having adjacent light sensitive pixels in which photocharge is generated in depletion zones of the pixels by light incident on the photosensor, comprising applying voltage to gate electrodes of the photopixels so that the depletion zone of one of the pixels extends into and lies under a portion of the depletion region of the other pixel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.