Patent · US Active

Ion sensitive detector

US9518953B2 · kind B2 · utility

2Cited by
11References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 6, 2012
Grant dateDec 13, 2016
Priority date
Expiry dateJun 10, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01N27/4146
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

An ISFET detector for determining concentration of a target ion in a fluid, the apparatus comprising: a semiconducting substrate comprising a source and a drain having source and drain electrodes respectively and a channel region between them in the substrate; an insulating material overlying the channel region; a gate electrode formed on the insulating material; a reference electrode electrifiable to establish an electric field in the channel region; an accumulator comprising a layer of material of thickness less than or equal to about 2 nm (nanometers) that accumulates a quantity of target ions responsive to concentration of the target ions in the fluid; a layer of a conducting material on which the accumulator is formed that is separate from the gate electrode; and a conducting element that electrically connects the layer of conducting material to the gate electrode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.