Plasma method for reducing post-lithography line width roughness

US9520298B2 · kind B2 · utility

Assignees

• IMEC VZW · BE
• Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

• Peter De Schepper · Wijnegem, BE
• Jean-Francois de Marneffe · Leuven, BE
• Efrain Altamirano Sanchez · Kessel-Lo, BE

Key dates

• Filing date: Feb 7, 2015
• Grant date: Dec 13, 2016
• Expiry date: Feb 7, 2035

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0273
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present disclosure is related to a method for treating a photoresist structure on a substrate, the method comprising producing one or more resist structures on a substrate, introducing the substrate in a plasma reactor, and subjecting the substrate to a plasma treatment at a temperature lower than zero degrees Celsius, such as between zero and −110° C. The plasma treatment may be a H2 plasma treatment performed in an inductively coupled plasma reactor. The treatment time may be at least 30s.