Transistor, heat sink structure thereof and method for manufacturing same
US9520338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2013 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Aug 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor is provided, which includes: a semiconductor growth substrate and a semiconductor thermoelectric effect device, wherein the semiconductor thermoelectric effect device contains a semiconductor compound layer, a metal layer, a heat conducting layer, a thermocouple heat conducting device and a heat sink layer, the semiconductor compound layer is grown on the semiconductor growth substrate, the metal layer is grown on the semiconductor compound layer, the heat conducting layer is grown on the metal layer, the thermocouple heating conducting device is grown on the heat conducting layer, and the heat sink layer is grown on the other side surface of the thermocouple heat conducting device opposite to the heat conducting layer. The thermocouple heating conducting device may further contain power supply arms which are grown on the heat conducting layer and are electrically connected with the thermocouple heat conducting device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.