Patent · US Active

Semiconductor device for use in flip-chip bonding, which reduces lateral displacement

US9520381B2 · kind B2 · utility

4Cited by
13References
16Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 8, 2015
Grant dateDec 13, 2016
Priority date
Expiry dateJan 8, 2035

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/384
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes multilayer chips in which a first semiconductor chip and a second semiconductor chip are bonded together. A first electrode pad is formed on a principal surface of the first semiconductor chip, and a first bump is formed on the first electrode pad. A second bump is formed on the principal surface of the second semiconductor chip such that the second bump is bonded to the first bump. The first electrode pad has an opening, and the opening and an entire peripheral portion of the opening form a stepped shape form a stepped shape. The first bump has a recessed shape that is recessed at a center thereof and covers the stepped shape.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.