Patent · US Active

Integrated non-volatile memory elements, design and use

US9520445B2 · kind B2 · utility

7Cited by

16References

8Claims

0Family size

Assignee

HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E.V. · DE

Inventors

Heidemarie Schmidt · Dresden, DE
Yao Shuai · Sichuan, CN
Shengqiang Zhou · Dresden, DE
Ilona Skorupa · Dresden, DE
Xin Min Ou · Zhuhai, CN
Nan Du · Palo Alto, US
Christian Mayr · Radebeul, DE
Wenbo Luo · Huizhou, CN

Key dates

Filing date	Jul 12, 2012
Grant date	Dec 13, 2016
Priority date	—
Expiry date	Jan 5, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

Various embodiments describe an integrated non-volatile component. The component may include a surface contact with associated mating contact wherein a ferroelectric layer is used as a conductive channel having variable conductivity and the surface contact and/or the associated mating contact are/is embodied as a rectifying contact and, as a result of an applied voltage between the surface contact and the associated mating contact, a non-volatile space charge zone forms in the surface contact terminal region and/or mating contact terminal region in the ferroelectric layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.