Silicon-controlled rectifier electrostatic discharge protection device and method for forming the same

US9520488B2 · kind B2 · utility

Assignee

• Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventor

• Meng Dai · Shanghai, CN

Key dates

• Filing date: Jul 16, 2014
• Grant date: Dec 13, 2016
• Expiry date: Nov 14, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115

Abstract

Various embodiments provide SCR ESD protection devices and methods for forming the same. An exemplary device includes a semiconductor substrate having a P-type well region, an N-type well region adjacent to the P-type well region, a first P-type doped region and a first N-type doped region in the P-type well region, and a second N-type doped region and a second P-type doped region in the N-type well region. A first center-doped region and a second center-doped region doped with impurity ions of a same type are located between the first N-type doped region and the second P-type doped region and extend across the P-type well region and the N-type well region. The first center-doped region is located within the second center-doped region, has a doping concentration higher than a doping concentration in the second center-doped region, and has a depth smaller than a depth of the second center-doped region.