Emitter structure based on silicon components to be used in a photovoltaic converter and a method for production of the photovoltaic device
US9520515B2 · kind B2 · utility
2Cited by
1References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Dec 30, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention aims to reduce and preferably to cancel the carrier collection limit effect in order to considerably increase the conversion efficiency. This improvement is achieved by a suitable modification of the amorphized layer thickness or even by discontinuities separating amorphizing beams or amorphized nanopellets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.