Integrated device comprising a matrix of OLED active pixels with improved dynamic range
US9521723B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2015 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | May 28, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2320/045
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated device includes a semiconducting substrate having a matrix of active pixels formed therein. Each active pixel includes an OLED diode, a first nMOS transistor having its source coupled to an anode of the OLED diode, and a refresh circuit coupled to a gate of the first nMOS transistor. The first nMOS transistor has its source and its substrate coupled together. The first nMOS transistor is situated in and on a first part of the semiconductor substrate, and the refresh circuit is situated in and on a second part of the semiconductor substrate, with the first part and the second part being electrically insulated from one another.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.