Patent · US Active

Blank of TiO2-SiO2 glass for a mirror substrate for use in EUV lithography and method for the production thereof

US9522840B2 · kind B2 · utility

0Cited by

2References

10Claims

0Family size

Assignee

HERAEUS QUARZGLAS GMBH & CO. KG · DE

Inventors

Stephan Thomas · Großkrotzenburg, DE
Klaus Becker · Hanau, DE
Stefan Ochs · Bad Camberg, DE

Key dates

Filing date	Feb 4, 2014
Grant date	Dec 20, 2016
Priority date	—
Expiry date	Feb 4, 2034

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC03C2203/52
WIPO fieldOther special machines
WIPO sectorMechanical engineering

Abstract

A blank of TiO2—SiO2 glass for a mirror substrate for use in EUV lithography has a low need for adaptation to optimize the progression of the coefficient of thermal expansion, and consequently also the progression of the zero crossing temperature Tzc. The TiO2—SiO2 glass has at a mean value of the fictive temperature Tf in the range between 920° C. and 970° C. a dependence expressed as the differential quotient dTzc/dTf of its zero crossing temperature Tzc on the fictive temperature Tf of less than 0.3.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.