Pixel structure and detection method of promoting defect detection rate

US9523899B2 · kind B2 · utility

Assignee

• TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED · CN

Inventor

• Zui Wang · Tangxia, CN

Key dates

• Filing date: Feb 6, 2015
• Grant date: Dec 20, 2016
• Expiry date: Jul 30, 2035

Classification

• Technology area (CPC G): Physics
• CPC primary: G02F2201/123
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The present invention provides a pixel structure and a detection method of promoting defect detection rate. The pixel structure of promoting defect detection rate comprises two areas of a main pixel (10) and a sub pixel (20), and the sub pixel (20) comprises a charge sharing thin film transistor (T3) and a charge sharing capacitor (CST3); a gate of the charge sharing thin film transistor (T3) is electrically coupled to a charge sharing scan line (Gate2(m)); the charge sharing capacitor (CST3) is constructed by an ITO layer upper electrode plate (42), a metal lower electrode plate (2) and an insulative layer (3) sandwiched between the ITO layer upper electrode plate (42) and the metal lower electrode plate (2); the ITO layer upper electrode plate (42) and an ITO pixel electrode (41) are in a same layer, and the ITO layer upper electrode plate (42) is employed as a pixel common electrode coupled to a common voltage signal line (Com(m)), and the metal lower electrode plate (2) is coupled to a drain of the charge sharing thin film transistor (T3).