Scan driving circuit for oxide semiconductor thin film transistor
US9524689B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 12, 2015 |
| Grant date | Dec 20, 2016 |
| Priority date | — |
| Expiry date | Apr 11, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2310/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The invention provides a scan driving circuit for an oxide semiconductor thin film transistor. The scan driving circuit for an oxide semiconductor thin film transistor includes multiple cascade connected GOA units and a shared auxiliary inverter. Each of the GOA units includes a main inverter. The auxiliary inverter is electrically connected to each main inverter to form corresponding pull-down holding parts for the respective GOA units, which can achieve the sharing of the pull-down holding parts of the multiple stages GOA units, the number of TFT elements can be reduced and therefore GOA layout space as well as circuit power consumption can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.