Patent · US Active

Methodology and system for wafer-level testing of MEMS pressure sensors

US9527731B2 · kind B2 · utility

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16References
16Claims
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Key dates

Filing dateOct 15, 2014
Grant dateDec 27, 2016
Priority date
Expiry dateDec 13, 2034

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01L27/005
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

A method for testing a plurality of pressure sensors on a device wafer includes placing a diaphragm of one of the pressure sensors on the device wafer in proximity to a nozzle of a test system. A pneumatic pressure stimulus is applied to the diaphragm via an outlet of the nozzle and a cavity pressure is measured within a cavity associated with the pressure sensor in response to application of the pneumatic pressure stimulus. The pneumatic pressure stimulus within the cavity corresponds to the pressure applied to the diaphragm. Methodology is executed to test the strength and/or stiffness of the diaphragm. Additionally, the methodology and test system can be utilized to determine an individual calibration factor for each pressure sensor on the device wafer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.