Production process for nanometer-size silicon material
US9527748B2 · kind B2 · utility
4Cited by
0References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2013 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Nov 18, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T10/70
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A nanometer-size silicon material produced by heat treating a lamellar polysilane exhibits Raman-shift peaks existing at 341±10 cm−1, 360±10 cm−1, 498±10 cm−1, 638±10 cm−1, and 734±10 cm−1 in a Raman spectrum, has a large specific surface area, and has a reduced SiO content.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.