Copolymer for lithography and method of manufacturing the same, resist composition, and method of manufacturing substrate
US9527938B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 5, 2013 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Mar 5, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/20
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
Provided is a copolymer for lithography containing a monomer containing an acid leaving group and a monomer not containing an acid leaving group, in which N(v1)/Nave is from 1.01 to 1.09 and all of N(v2)/Nave, N(v3)/Nave, and N(v4)/Nave are from 0.95 to 1.05 when, among five fractions obtained by dividing an eluate providing a peak according to the copolymer in an elution curve obtained by GPC in order of elution so as to have an equal volume, ratios of monomer units containing an acid leaving group among the total monomer units constituting a copolymer included in the respective fractions from the first which is eluted earliest to the fourth are denoted as N(v1) mol % to N(v4) mol %, respectively, and the ratio of the monomer unit containing an acid leaving group among the total monomer units constituting a copolymer included in the sum of the five fractions is denoted as Nave mol %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.