Method for manufacturing electronic device by forming a hole in a multilayer insulator film by plasma etching
US9530664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 9, 2014 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Jun 9, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76804
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes the stage of partially removing a first insulator layer to form an opening passing through the first insulator layer by plasma etching using a gas of a first type, and the stage of partially removing a second insulator layer to form an opening passing through the second insulator layer by plasma etching using a gas of a second type. The gas of a first type contains a first component capable of etching the first insulator layer, and a gas of the second type contains a second component different from the first component, capable of etching the second insulator layer and a third component having a higher deposition ability than the second component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.