Method of forming through wiring
US9530692B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Feb 9, 2035 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB06B1/0292
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
Provided is a method of forming a through wiring, including forming a first insulating film on a first surface and a second surface of a substrate; forming a through hole to pass through the first insulating film formed on the first surface side and the substrate; forming a second insulating film formed from a material different from that of the first insulating film on an inner wall of the through hole; forming a conductive film on the first insulating film formed on the second surface; forming an opening in the first insulating film by processing the first insulating film formed on the second surface; and filling an inner portion of the through hole with a conductive material by electrolytic plating using the conductive film exposed at the bottom portion of the through hole as a seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.