Feedback and impedance circuits, devices and methods for broadband radio-frequency amplifiers
US9530771B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2014 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Nov 15, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/451
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Feedback and impedance circuits, devices and methods for broadband radio-frequency (RF) amplifiers. An RF amplifier architecture can include an amplifier having a first field-effect transistor (FET) and a second FET arranged in a cascode configuration. The gate of the first FET can be configured to receive an RF signal, the drain of the first FET can be coupled to the source of the second FET, and the drain of the second FET can be configured to output an amplified RF signal. The RF amplifier architecture can further include a first feedback circuit implemented between the drain of the second FET and the gate of the second FET to provide gain control, and a second feedback circuit implemented between the drain of the second FET and the gate of the first FET to provide an increase in a frequency range having a desirable range of gain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.