Semiconductor memory device and method of fabricating the same
US9530789B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 1, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Jun 17, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/694
Abstract
Semiconductor memory devices and methods of fabricating the same are provided. A semiconductor memory device includes stack gate structures that are spaced apart from each other in a first direction horizontal to a substrate. Each of the stack gate structures includes insulating layers and gate electrodes alternately and repeatedly stacked on the substrate. Vertical channel structures penetrate the stack gate structures. A source plug line is provided between the stack gate structures. The source plug line is in contact with the substrate and extends in a second direction intersecting the first direction. The substrate being in contact with the source plug line includes a plurality of protruding regions formed along the second direction. Each of the protruding regions has a first width, and the protruding regions are spaced apart from each other by a first distance greater than the first width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.