Patent · US Active

Method and apparatus for reducing crosstalk in CMOS image sensor

US9530814B2 · kind B2 · utility

0Cited by

1References

9Claims

0Family size

Assignee

Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

Wenjie Peng · Shanghai, CN
Minwei Xi · Shanghai, CN

Key dates

Filing date	Mar 20, 2015
Grant date	Dec 27, 2016
Priority date	—
Expiry date	Mar 20, 2035

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/807
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A CMOS image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes a semiconductor substrate having a front side and a back side, at least two pixels disposed in the first side, a shallow trench isolation disposed in the front side between the at least two pixels, and a crosstalk reduction element disposed in the back side at a location above the shallow trench isolation. The crosstalk reduction element reduces optical and electrical crosstalk and improves the image quality of the CMOS image sensor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.