Semiconductor device and manufacturing method for the same
US9530838B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Aug 13, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
To improve characteristics of a semiconductor device (vertical power MOSFET). A spiral p-type column region having a corner is formed in a peripheral region surrounding a cell region in which a semiconductor element is formed. In an epitaxial layer of the peripheral region surrounding the cell region in which the semiconductor element is formed, a trench spirally surrounding the cell region and having the first and second side faces making up the corner is formed and the trench is filled with the epitaxial layer. By spirally arranging the p-type column region (n-type column region) in such a manner, a drop in a withstand voltage margin due to a hot spot can be avoided. In addition, the continuity of the p-type column region (n-type column region) is maintained. As a result, electric field concentration is alleviated step by step toward the outer periphery and the withstand voltage is therefore increased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.