Semiconductor device with polycrystalline silicon film
US9530855B2 · kind B2 · utility
2Cited by
5References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 2015 |
| Grant date | Dec 27, 2016 |
| Priority date | — |
| Expiry date | Jul 7, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This semiconductor device comprises: a gate insulating film provided on a surface of a channel layer; a gate electrode provided on an upper surface of the gate insulating film; and a diffusion layer provided in the channel layer. Furthermore, this semiconductor device comprises: a polycrystalline silicon film provided so as to cover a surface of the gate electrode and the diffusion layer; and an inter-layer insulating film provided so as to cover the gate electrode and the polycrystalline silicon film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.